FinFETs and Methods for Forming the Same

ABSTRACT

Methods for forming a semiconductor device and a FinFET device are disclosed. A method comprises forming a dummy gate electrode layer over a substrate, the dummy gate electrode layer having a first height, forming a first etch stop layer on the dummy gate electrode layer, forming a first hard mask layer on the first etch stop layer, and patterning the first hard mask layer. The method further comprises patterning the first etch stop layer to align with the patterned first hard mask layer, and patterning the gate electrode layer to form a dummy gate electrode, the dummy gate electrode aligning with the patterned first etch stop layer, wherein after the patterning the gate electrode layer the first hard mask layer has a vertical sidewall of a second height, the second height being less than the first height, and the first hard mask layer having a rounded top surface.

BACKGROUND

Semiconductor devices are used in a large number of electronic devices,such as computers, cell phones, and others. Semiconductor devicescomprise integrated circuits that are formed on semiconductor wafers bydepositing many types of thin films of material over the semiconductorwafers, and patterning the thin films of material to form the integratedcircuits. Integrated circuits typically include field-effect transistors(FETs).

Conventionally, planar FETs have been used in integrated circuits.However, with the ever increasing density and decreasing footprintrequirements of modern semiconductor processing, planar FETs maygenerally incur problems when reduced in size. Some of these problemsinclude sub-threshold swing degradation, significant drain inducedbarrier lowering (DIBL), fluctuation of device characteristics, andleakage. Fin field-effect transistors (FinFETs) have been studied toovercome some of these problems.

BRIEF DESCRIPTION OF THE DRAWINGS

For a more complete understanding of the present embodiments, and theadvantages thereof, reference is now made to the following descriptionstaken in conjunction with the accompanying drawings, in which:

FIG. 1 is an example of a fin field-effect transistor (FinFET) in athree-dimensional view;

FIGS. 2, 3, 4, 5, 6, 7, 8, 9A, 9B, 10A, 10B, 11A, 11B, 12A, and 12B arecross-sectional views of intermediate stages in the manufacturing of aFinFET in accordance with an embodiment; and

FIG. 13 is a process flow of the process shown in FIGS. 2 through 12B inaccordance with an embodiment.

DETAILED DESCRIPTION OF ILLUSTRATIVE EMBODIMENTS

The making and using of the present embodiments are discussed in detailbelow. It should be appreciated, however, that the present disclosureprovides many applicable inventive concepts that can be embodied in awide variety of specific contexts. The specific embodiments discussedare merely illustrative of specific ways to make and use the disclosedsubject matter, and do not limit the scope of the different embodiments.

Fin Field-Effect Transistors (FinFETs) and methods of forming the sameare provided in accordance with various embodiments. The intermediatestages of forming the FinFETs are illustrated. Some variations of theembodiments are discussed. Throughout the various views and illustrativeembodiments, like reference numbers are used to designate like elements.Although method embodiments are discussed in a particular order, variousother method embodiments may be performed in any logical order and mayinclude fewer or more steps described herein.

FIG. 1 illustrates an example of a FinFET 10 in a three-dimensionalview. The FinFET 10 comprises a fin 22 on a substrate 20. A gatedielectric 24 is along sidewalls and over a top surface of the fin 22,and a gate electrode 26 is over the gate dielectric 24. Source/drainregions 28 and 30 are disposed in opposite sides of the fin 22 withrespect to the gate dielectric 24 and gate electrode 26. FIG. 1 furtherillustrates reference cross-sections that are used in later figures.Cross-section A-A is along a longitudinal axis of the fin 22 and in adirection of, for example, a current flow between the source/drainregions 28 and 30. Cross-section B-B is perpendicular to cross-sectionA-A and is across a channel, gate dielectric 24, and gate electrode 26of the FinFET 10.

FIGS. 2 through 12B are cross-sectional views of intermediate stages inthe manufacturing of a FinFET in accordance with an embodiment, and FIG.13 is a process flow of the process shown in FIGS. 2 through 12B. FIGS.2 through 8 illustrate cross-section B-B illustrated in FIG. 1, exceptfor multiple FinFETs (see FIGS. 9A through 12B with four semiconductorfins 40 and each semiconductor fin 40 having four gate electrodes overit). In FIGS. 9A through 12B, figures ending with an “A” designation areillustrated along a similar cross-section A-A, and figures ending with a“B” designation are illustrated along a similar cross-section B-B.

FIG. 2 illustrates a substrate 40, which may be a part of a wafer.Substrate 40 may comprise a semiconductor material such as silicon,germanium, diamond, or the like. Alternatively, compound materials suchas silicon germanium, silicon carbide, gallium arsenic, indium arsenide,indium phosphide, silicon germanium carbide, gallium arsenic phosphide,gallium indium phosphide, combinations of these, and the like, may alsobe used. Additionally, the substrate 40 may comprise asilicon-on-insulator (SOI) substrate. Generally, an SOI substratecomprises a layer of a semiconductor material such as epitaxial silicon,germanium, silicon germanium, SOI, silicon germanium on insulator(SGOI), or combinations thereof. The substrate 40 may be doped with ap-type dopant, such as boron, aluminum, gallium, or the like, althoughthe substrate may alternatively be doped with an n-type dopant, as isknown in the art.

The substrate 40 may include active devices (not shown in FIG. 2). Asone of ordinary skill in the art will recognize, a wide variety ofdevices such as transistors, capacitors, resistors, combinations ofthese, and the like may be used to generate the structural andfunctional requirements of the design for the FinFET. The devices may beformed using any suitable methods. Only a portion of the substrate 40 isillustrated in the figures, as this is sufficient to fully describe theillustrative embodiments. In an exemplary embodiment the substrate 40may be a semiconductor fin (see FIGS. 1 and 10A through 12B), and isreferred to as semiconductor fin 40 hereinafter. In this embodiment,semiconductor fins may be formed to extend from a substrate.

A dummy gate dielectric layer 42, a dummy gate electrode layer 44, anetch stop layer (ESL) 46, a first hard mask layer 48, an anti-reflectivedeposition (ARD) layer 50, a second hard mask layer 52, and aphotoresist 54 are formed (step 200) over the semiconductor fin 40. Thedummy gate dielectric layer 42 may be formed over the semiconductor fin40 by thermal oxidation, chemical vapor deposition (CVD), aspin-on-glass process, sputtering, or any other methods known and usedin the art for forming a dummy gate dielectric. In some embodiments, thedummy gate dielectric layer 42 may be made of one or more suitabledielectric materials such as silicon oxide, silicon nitride, low-kdielectrics such as carbon doped oxides, extremely low-k dielectricssuch as porous carbon doped silicon dioxide, a polymer such aspolyimide, the like, or a combination thereof. In other embodiments, thedummy gate dielectric layer 42 includes dielectric materials having ahigh dielectric constant (k value), for example, greater than 3.9. Thematerials may include silicon nitrides, oxynitrides, metal oxides suchas HfO₂, HfZrO_(x), HfSiO_(x), HfTiO_(x), HfAlO_(x), the like, orcombinations and multi-layers thereof.

The dummy gate electrode layer 44 may be formed over the dummy gatedielectric layer 42. The dummy gate electrode layer 44 may comprise aconductive material and may be selected from a group comprisingpolycrystalline-silicon (poly-Si), poly-crystalline silicon-germanium(poly-SiGe), metallic nitrides, metallic silicides, metallic oxides, andmetals. The dummy gate electrode layer 44 may be deposited by CVD,sputter deposition, or other techniques known and used in the art fordepositing conductive materials. The top surface of the dummy gateelectrode layer 44 usually has a non-planar top surface and may beplanarized after it is deposited. In an embodiment, the dummy gateelectrode layer 44 may be formed to have a thickness from about 50 nm toabout 100 nm.

The ESL 46 may be deposited over the dummy gate dielectric layer 44. TheESL 46 may be made of one or more suitable dielectric materials such assilicon oxide, silicon nitride, low-k dielectrics such as carbon dopedoxides, extremely low-k dielectrics such as porous carbon doped silicondioxide, a polymer such as polyimide, combinations of these, or thelike. The ESL 46 may be deposited through a process such as CVD, or aspin-on-glass process, although any acceptable process may be utilizedto form the ESL 46 to a thickness between about 20 Å to about 80 Å. Inan embodiment, the ESL 46 may be used as an etch stop layer and/or achemical mechanical polish (CMP) stop layer for subsequent processes.

The first hard mask layer 48 may be formed over the ESL 46. The firsthard mask layer 48 may be a masking material such as silicon oxide,silicon nitride, the like, or a combination thereof and may be formedusing a process such as CVD. However, any other suitable hard maskmaterial, such as poly-silicon, and any other process of formation, suchas plasma enhanced CVD (PECVD), may alternatively be utilized. In anembodiment the first hard mask layer 48 may be formed to a thickness ofbetween about 500 Å and about 1000 Å.

The ARD layer 50 may be formed over the first hard mask layer 48 and maybe utilized for critical dimension control in order to obtain andcontrol the desired dimensions of the patterning of the first hard masklayer 48 (not shown in FIG. 2 but illustrated and discussed below withrespect to FIG. 5). In an embodiment the ARD layer 50 may compriseamorphous carbon formed by a CVD process, although other suitablematerials and methods of formation may alternatively be utilized. TheARD layer 50 may be formed to a thickness of between about 700 Å andabout 1500 Å.

The second hard mask layer 52 may be a hard mask utilized to helppattern the ARD layer 50, and may be a masking material such as siliconoxynitride (SiON), although other suitable materials, such as siliconoxide or silicon nitride, may alternatively be utilized, and may beformed a process such as CVD. However, any other suitable processes andthicknesses may alternatively be utilized. In an embodiment the secondhard mask layer 52 may be formed to a thickness of between about 150 Åand about 300 Å.

A photoresist 54 may be deposited and patterned over the second hardmask layer 52. Although FIG. 2 illustrates four separate sections of thefirst photoresist 54, there may be more or less sections depending onthe number of dummy gate electrodes 60 (see FIG. 9A) that are desired.The photoresist 54 may comprise a conventional photoresist material,such as a deep ultra-violet (DUV) photoresist, and may be deposited onthe surface of the second hard mask layer 52, for example, by using aspin-on process to place the photoresist 54. However, any other suitablematerial or method of forming or placing the photoresist 54 mayalternatively be utilized. Once the photoresist 54 has been placed onsecond hard mask layer 52, the photoresist 54 may be exposed to energy,e.g. light, through a patterned reticle in order to induce a reaction inthose portions of the photoresist 54 exposed to the energy. Thephotoresist 54 may then be developed, and portions of the photoresist 54may be removed, exposing a surface of the second hard mask layer 52.

After developing and removing a portion of the photoresist 54, an etchstep is further performed into the second hard mask layer 52 to removethe exposed portions, thereby patterning the second hard mask layer 52(step 202) as illustrated in FIG. 3. The second hard mask layer 52 maybe patterned by a dry chemical etch with a plasma source and an etchantgas. The plasma source may be an inductively coupled plasma (ICR) etch,a transformer coupled plasma (TCP) etch, an electron cyclotron resonance(ECR) etch, a reactive ion etch (RIE), or the like. In an embodiment,the process for patterning the second hard mask layer 52 is performing aplasma etch at a pressure in a range from about 3 mTorr to about 10mTorr, at a power in a range from about 300 watts to about 1000 watts,with an etching bias in range from about 50 volts to about 500 volts,with a plasma flow including from about 10 standard cubic centimetersper minute (sccm) to about 100 sccm of CF₄, and about 10 sccm to about50 sccm of CH₂F₂.

After the second hard mask layer 52 has been patterned, the pattern maybe transferred from the second hard mask layer 52 to the ARD layer 50(step 204) as illustrated in FIG. 4. In some embodiments, the patterningmay be performed by a dry, anisotropic etch. The ARD layer 50 may bepatterned by a dry chemical etch with a plasma source and an etchantgas. The plasma source may be an ICP etch, a TCP etch, an ECR etch, anRIE, or the like. In an embodiment, the process for patterning the ARDlayer 50 is performing a plasma etch at a pressure in a range from about5 mTorr to about 10 mTorr, at a power in a range from about 500 watts toabout 1500 watts, with an etching bias in range from about 50 volts toabout 400 volts, with a plasma flow including from about 50 sccm toabout 200 sccm of SO₂, about 50 sccm to about 300 sccm of O₂, and about100 sccm to about 500 sccm of He.

After the ARD layer 50 has been patterned, the pattern may betransferred from the ARD layer 50 to the first hard mask layer 48 (step206) as illustrated in FIG. 5. In some embodiments, the patterning maybe performed by a dry, anisotropic etch. The first hard mask layer 48may be patterned by a dry chemical etch with a plasma source and anetchant gas. The plasma source may be an ICP etch, a TCP etch, an ECRetch, an RIE, or the like. In an embodiment, the process for patterningthe first hard mask layer 48 is performing a plasma etch at a pressurein a range from about 3 mTorr to about 10 mTorr, at a power in a rangefrom about 300 watts to about 800 watts, with an etching bias in rangefrom about 200 volts to about 700 volts, with a plasma flow includingfrom about 50 sccm to about 200 sccm of CF₄, about 50 sccm to about 200sccm of CHF₃, and about 100 sccm to about 400 sccm of Ar.

After the first hard mask layer 48 has been patterned, the pattern maybe transferred from the first hard mask layer 48 to the ESL 46 (step208) as illustrated in FIG. 6. In some embodiments, the patterning maybe performed by a dry, anisotropic etch. The ESL 46 may be patterned bya dry chemical etch with a plasma source and an etchant gas. The plasmasource may be an ICP etch, a TCP etch, an ECR etch, an RIE, or the like.In an embodiment, the process for patterning the ESL 46 is performing aplasma etch at a pressure in a range from about 5 mTorr to about 15mTorr, at a power in a range from about 500 watts to about 1500 watts,with an etching bias in range from about 200 volts to about 600 volts,with a plasma flow including from about 10 sccm to about 50 sccm of CF₄,about 50 sccm to about 200 sccm of CH₂F₂/CH₂F₃, and about 3 sccm toabout 20 sccm of O₂.

After the ESL 46 has been patterned, the patterned ARD layer 50 may beremoved exposing top surfaces 48A of the first hard mask layer 48 (step210) as illustrated in FIG. 7. In some embodiments, the ARD layer 50removal process may be performed without exposure to an externalenvironment (also referred to as “in-situ”) between the patterning ofthe ESL 46 and the ARD layer 50 removal to prevent defects from formingon the patterned first hard mask layer 48 and the patterned ESL 46. TheARD layer 50 may be removed by a dry chemical etch with a plasma sourceand an etchant gas. The plasma source may be an ICP etch, a TCP etch, anECR etch, an RIE, or the like. In an embodiment, the process forremoving the ARD layer 50 is performing a plasma etch at a pressure in arange from about 5 mTorr to about 15 mTorr, at a power in a range fromabout 300 watts to about 1000 watts, with an etching bias in range fromabout 40 volts to about 200 volts, with a plasma flow including fromabout 50 sccm to about 500 sccm of O₂.

After the patterned ARD layer 50 has been removed, the pattern may betransferred from the first hard mask layer 48 and the ESL 46 to thedummy gate electrode layer 44 and the dummy gate dielectric layer 42(step 212) as illustrated in FIG. 8. In some embodiments, the dummy gateelectrode layer 44 and the dummy gate dielectric layer 42 patterningprocess may be performed without exposure to an external environment(“in-situ”) between the removal of the ARD layer 50 and the patterningof the dummy gate electrode layer 44 and the dummy gate dielectric layer42 prevent defects from forming on the patterned first hard mask layer48, the patterned ESL 46, the patterned dummy gate electrode layer 44,and the patterned dummy gate dielectric layer 42. The dummy gateelectrode layer 44 and the dummy gate dielectric layer 42 may bepatterned by a dry chemical etch with a plasma source and an etchantgas. The plasma source may be an ICP etch, a TCP etch, an ECR etch, anRIE, or the like. In an embodiment, the process for patterning the dummygate electrode layer 44 is performing a plasma etch at a pressure in arange from about 2 mTorr to about 5 mTorr, at a power in a range fromabout 300 watts to about 800 watts, with an etching bias in range fromabout 50 volts to about 150 volts, with a plasma flow including fromabout 20 sccm to about 200 sccm of HBr, and about 2 sccm to about 10sccm of O₂. In some embodiments, the etch process to pattern the dummygate electrode layer 44 and the dummy gate dielectric layer 42 maycomprise an etch process being performed with an additional over-etch ofabout 10% to about 50% of the normal etching time span.

As illustrated in FIG. 8, after the patterning of the dummy gateelectrode layer 44 and the dummy gate dielectric layer 42, the patternedfirst hard mask layer 48 has a vertical sidewall 48B (meaning thatsidewall 48B is substantially orthogonal to the top surface of thesemiconductor fin 40) with a height H1 from about 25% to about 50% ofthe height H2 of the dummy gate electrode 60. In some embodiments, theheight H1 of the vertical sidewall of the patterned first hard masklayer 48 is from about 200 Å to about 400 Å and has a rounded topsurface 48A. This vertical sidewall 48B with the height H1 in theaforementioned range provides an etching margin to produce a dummy gateelectrode 60 (see FIG. 9A) with a square top profile rather than a dummygate electrode with a rounded top profile as caused by a hard maskwithout enough etching margin.

After the patterning of the dummy gate electrode layer 44 and the dummygate dielectric layer 42, a wet clean process may be performed (step214) on that patterned first hard mask layer 48, the patterned ESL 46,the patterned dummy gate electrode layer 44, and the patterned dummygate dielectric layer 42. In an embodiment, the wet clean process maycomprise a diluted hydrofluoric acid (DHF) treatment, an ammoniumperoxide mixture (APM), a sulfuric peroxide mixture (SPM), hot deionizedwater (DI water), the like, or a combination thereof.

After the wet clean process, the first hard mask layer 48 and the ESL 46may be removed exposing the top surfaces 60A of the dummy gate electrode60 (step 216) as illustrated in FIGS. 9A and 9B. The removal of thefirst hard mask layer 48 and the ESL 46 form the dummy gate electrodes60 and the dummy gate dielectric layers 58 from the dummy gate electrodelayer 44 and dummy gate dielectric layer 42, respectively. The dummygates electrodes 60 have top surfaces 60A that are substantiallyparallel to a top surface of the semiconductor fin 40 and sidewalls 60Bthat are substantially orthogonal to the top surface the semiconductorfin 40. Further, the sidewalls 60B are substantially orthogonal to thetop surfaces 60A forming square (right angle) intersections between thesidewalls 60B and the top surfaces 60A.

As illustrated in FIG. 9B, the semiconductor fin 40 is the portion of asemiconductor strip 38 that extends above a top surface of a dielectriclayer 39 between the semiconductor strips 38. The dielectric layer 39may be formed of silicon oxide deposited by a high density plasma, forexample, although other dielectric materials formed according to varioustechniques may also be used.

The patterning and etch steps described above may be performed in anetching chamber. In some embodiments, the etching chamber may be fromLam Research Corp., Applied Materials, Hitachi-Hitech, Tokyo ElectronLimited (TEL), or the like. The chamber may have a chiller temperaturein a range from 20° C. to about 30° C. and a chamber wall temperature ina range from about 50° C. to about 80° C. The chamber may comprise anelectronic static chuck temperature with a four-zone distribution in arange from about 40° C. to about 80° C. However, as one of ordinaryskill in the art would understand, any suitable etching chamber vendoror conditions may be used.

The first hard mask layer 48 and the ESL 46 may be removed in a varietyof ways. In one embodiment, a plasma dry etch may be used to remove thefirst hard mask layer 48 and the ESL 46. In another embodiment, this isa multi-step process with the first step involving a chemical mechanicalpolishing (CMP), in which the first hard mask layer 48 and the ESL 46are reacted and then ground away using an abrasive. This process maycontinue until the top surfaces 60A of the dummy gate electrode 60 areexposed. The next step of removing the first hard mask layer 48 and theESL 46 may be performed by, for example, a wet etch process or a dryetch process.

Gate spacers 62 may be formed on opposite sides of the dummy gateelectrodes 60 (step 218) as illustrated in FIGS. 10A and 10B. The gatespacers 62 are typically formed by blanket depositing a spacer layer(not shown) on the previously formed structure. In an embodiment, thegate spacers 62 may include a spacer liner (not shown) comprising SiN,SiC, SiGe, oxynitride, oxide, combinations thereof, or the like. Thespacer layer may comprise SiN, oxynitride, SiC, SiON, oxide,combinations thereof, or the like and may be formed by methods utilizedto form such a layer, such as CVD, plasma enhanced CVD, sputter, andother methods known in the art. The gate spacers 62 are then patterned,for example, by anisotropically etching to remove the spacer layer fromthe horizontal surfaces of the structure.

Source/drain regions 64 may be formed in the semiconductor fin 40 (step220). The source/drain regions 64 may be doped by performing animplanting process to implant appropriate dopants to complement thedopants in the semiconductor fin 40. In another embodiment, thesource/drain regions 64 may be formed by forming recesses (not shown) inthe semiconductor fin 40 and epitaxially growing material in therecesses. The source/drain regions 64 may be doped either through animplantation method as discussed above, or else by in-situ doping as thematerial is grown.

In another embodiment, the source/drain regions 64 may comprise alightly doped region and a heavily doped region. In this embodiment,before the gate spacers 62 are formed, the source/drain regions 64 maybe lightly doped. After the gate spacers 62 are formed, the source/drainregions 64 may then be heavily doped. This forms lightly doped regionsand heavily doped regions. The lightly doped regions are primarilyunderneath the gate spacers 62 while the heavily doped regions areoutside of the gate spacers 62 along the semiconductor fin 40.

After the formation of the source/drain regions 64, an ESL 66 and aninterlayer dielectric (ILD) 68 may be formed over the gate spacers 62,the dummy gate electrodes 60, source/drain regions 64 and thesemiconductor fin 40 (step 222) as illustrated in FIGS. 10A and 10B. TheESL 66 may be conformally deposited over components on the semiconductorfin 40. In an embodiment, the ESL 66 may comprise SiN, SiCN, SiON, thelike, or a combination thereof and may be formed by atomic layerdeposition (ALD), molecular layer deposition (MLD), a furnace process,CVD, PECVD, the like, or a combination thereof.

After the ESL 66 is formed, the ILD 68 may be formed over the ESL 66.The ILD 68 may be conformally deposited over the ESL 66. In anembodiment, the ILD 68 may comprise SiO₂, SiON, the like, or acombination thereof. The ILD 68 may be formed by CVD, ALD, PECVD,subatmospheric CVD (SACVD), flowable CVD, a high density plasma (HDP), aspin-on-dielectric process, the like, or a combination thereof.

The ILD 68 and the ESL 66 may be planarized to expose top surfaces 60Aof the dummy gate electrodes 60. In an embodiment, the ILD 68 and theESL 66 may be planarized by using a CMP to remove portions of the ILD 68and the ESL 66. In other embodiments, other planarization techniques maybe used, such as etching.

After the ILD 68 and the ESL 66 are planarized to expose top surfaces60A of the dummy gate electrodes 60, the dummy gate electrodes 60 andthe dummy gate dielectric layers 58 may be removed (steps 224 and 226)as illustrated in FIGS. 11A and 11B. The removal of the dummy gateelectrodes 60 and the dummy gate dielectric layers 58 may form openings70 over a channel region in the semiconductor fin 40. The dummy gateelectrodes 60 and the dummy gate dielectric layers 58 may be removed byan etch that is selective to the material of the dummy gate electrodes60 and the dummy gate dielectric layers 58. In an embodiment, the dummygate electrodes 60 and dummy gate dielectric layers 58 may be removed byan etch comprising NH₄OH, tetramethylammonium hydroxide (TMAH), NF₃,SF₆, Cl₂, HBr, the like, or a combination thereof.

After the dummy gate electrodes 60 and dummy gate dielectric layers 58are removed, gate dielectric layers 80 and gate electrodes 82 are formed(steps 228 and 230) in the openings 70 as illustrated in FIGS. 12A and12B. The gate dielectric layers 80 and the gate electrodes 82 may beformed of similar materials and by similar processes as the dummy gatedielectric layers 42 and dummy gate electrode layers 44 described inFIG. 2, and are not repeated herein. The semiconductor device mayundergo further processing such as formation of contacts to the gateselectrodes 82 and the source/drain regions 64.

It has been found that having a vertical sidewall 48B with a height H1from about 25% to about 50% of the dummy gate electrode height H2 (seeFIG. 8) provides an etching margin to produce a dummy gate electrode 60(see FIG. 9A) with a square top profile. This square top profile of thedummy gate electrode 60 prevents the necessity to over polish the dummygate electrode to remove ESL residue which may cause a shortened gateheight. Further, the square top profile may provide a better structurefor end-point detection of the planarization of ILD 68 and the ESL 66.

According to an embodiment, a method of forming a semiconductor devicecomprises forming a dummy gate electrode layer over a substrate, thedummy gate electrode layer having a first height, forming a first etchstop layer on the dummy gate electrode layer, forming a first hard masklayer on the first etch stop layer, and patterning the first hard masklayer. The method further comprises patterning the first etch stop layerto align with the patterned first hard mask layer, and patterning thegate electrode layer to form a dummy gate electrode, the dummy gateelectrode aligning with the patterned first etch stop layer, whereinafter the patterning the gate electrode layer the first hard mask layerhas a vertical sidewall of a second height, the second height being lessthan the first height, and the first hard mask layer having a roundedtop surface.

According to another embodiment, a method of forming a FinFET devicecomprises forming a semiconductor fin over a substrate, thesemiconductor fin extending from a top surface of the substrate, forminga dummy gate dielectric layer on the semiconductor fin, forming a dummygate electrode layer on the dummy gate dielectric layer, forming a firsthard mask layer over the dummy gate dielectric layer, and patterning thefirst hard mask layer, the patterned hard mask layer having a topsurface parallel to a top surface of the semiconductor fin. The methodfurther comprises patterning the dummy gate electrode layer forming adummy gate electrode, the dummy gate electrode being coterminous withthe patterned hard mask layer, wherein after the patterning the dummygate electrode, the first hard mask layer has a vertical sidewall havinga first height and a rounded top surface, and removing the first hardmask layer to expose a top surface of the dummy gate electrode, theexposed top surface of the dummy gate electrode having a top surfaceparallel to the top surface of the semiconductor fin.

According to a further embodiment, a method of forming areplacement-gate FinFET device comprises forming a plurality of dummygate electrodes over a semiconductor fin, the forming the plurality ofdummy gate electrodes comprising forming a dummy gate dielectric layeron the semiconductor fin, forming a dummy gate electrode layer on thedummy gate dielectric layer, the dummy gate electrode layer having afirst height, patterning a hard mask layer over the dummy gate electrodelayer, the patterned hard mask layer having a sidewall of a secondheight, the second height being from about 25% to about 50% of the firstheight, the sidewall being orthogonal to a top surface of thesemiconductor fin, and patterning the dummy gate electrode and dummygate dielectric layer, the patterned dummy gate electrode layer alignedwith the patterned hard mask layer. The method further comprises forminggate spacers on opposites sides of the plurality of dummy gateelectrodes, forming source/drain regions in the semiconductor fin, thesource/drain regions being between adjacent pairs of the dummy gateelectrodes, and conformally depositing an etch stop layer over theplurality of dummy gate electrodes and respective gate spacers. Themethod further comprises forming an interlayer dielectric on the etchstop layer, removing the plurality of dummy gate electrodes and thedummy gate dielectric layers, and forming a plurality of active gateelectrodes in the openings formed by the removal of the plurality ofdummy gate electrodes.

Although the present embodiments and their advantages have beendescribed in detail, it should be understood that various changes,substitutions, and alterations can be made herein without departing fromthe spirit and scope of the disclosure as defined by the appendedclaims. Moreover, the scope of the present application is not intendedto be limited to the particular embodiments of the process, machine,manufacture, composition of matter, means, methods, and steps describedin the specification. As one of ordinary skill in the art will readilyappreciate from the disclosure, processes, machines, manufacture,compositions of matter, means, methods, or steps, presently existing orlater to be developed, that perform substantially the same function orachieve substantially the same result as the corresponding embodimentsdescribed herein may be utilized according to the present disclosure.Accordingly, the appended claims are intended to include within theirscope such processes, machines, manufacture, compositions of matter,means, methods, or steps.

What is claimed is:
 1. A method of forming a semiconductor device, themethod comprising: forming a dummy gate electrode layer over asubstrate, the dummy gate electrode layer having a first height; forminga first etch stop layer on the dummy gate electrode layer; forming afirst hard mask layer on the first etch stop layer; patterning the firsthard mask layer; patterning the first etch stop layer to align with thepatterned first hard mask layer; and patterning the gate electrode layerto form a dummy gate electrode, the dummy gate electrode aligning withthe patterned first etch stop layer, wherein after the patterning thegate electrode layer the first hard mask layer has a vertical sidewallof a second height, the second height being in a range from about 25% toabout 50% of the first height.
 2. The method of claim 1, wherein thepatterning the dummy gate electrode layer further comprises performing aplasma etch at a pressure in a range from about 2 mTorr to about 5mTorr, at a power in a range from about 300 watts to about 800 watts,with an etching bias in range from about 50 volts to about 150 volts,with a plasma flow including from about 20 sccm to about 200 sccm ofHBr, and about 2 sccm to about 10 sccm of O₂.
 3. The method of claim 1,wherein after the patterning the gate electrode layer the first hardmask layer has a rounded top surface.
 4. The method of claim 1, whereinthe second height is in a range from about 200 Å to about 400 Å.
 5. Themethod of claim 1 further comprising: forming an anti-reflectivedeposition (ARD) layer over the first hard mask layer; forming a secondhard mask layer over the ARD layer; forming and patterning a photoresistover the second hard mask layer; patterning the second hard mask layerto align with the patterned photoresist; patterning the ARD layer toalign with the patterned second hard mask layer; and after thepatterning the first etch stop layer, removing the ARD layer.
 6. Themethod of claim 5, wherein the patterning the second hard mask layerfurther comprises performing a plasma etch at a pressure in a range fromabout 3 mTorr to about 10 mTorr, at a power in a range from about 300watts to about 1000 watts, with an etching bias in range from about 50volts to about 500 volts, with a plasma flow including from about 10sccm to about 100 sccm of CF₄, and about 10 sccm to about 50 sccm ofCH₂F₂.
 7. The method of claim 5, wherein the patterning the ARD layerfurther comprises performing a plasma etch at a pressure in a range fromabout 5 mTorr to about 10 mTorr, at a power in a range from about 500watts to about 1500 watts, with an etching bias in range from about 50volts to about 400 volts, with a plasma flow including from about 50sccm to about 200 sccm of SO₂, about 50 sccm to about 300 sccm of O₂,and about 100 sccm to about 500 sccm of He.
 8. The method of claim 5,wherein the removing the ARD layer further comprises a plasma etch at apressure in a range from about 5 mTorr to about 15 mTorr, at a power ina range from about 300 watts to about 1000 watts, with an etching biasin range from about 40 volts to about 200 volts, with a plasma flowincluding from about 50 sccm to about 500 sccm of O₂.
 9. The method ofclaim 1 further comprising: removing the first hard mask layer and thefirst etch stop layer; forming gate spacers on opposite sides of thedummy gate electrode; forming source/drain regions in the substrate, thedummy gate electrode being laterally between the source/drain regions;removing the dummy gate electrode to expose a channel region in thesubstrate; and forming an active gate over the channel region.
 10. Themethod of claim 1, wherein the substrate comprises a semiconductor fin.11. A method of forming a FinFET device, the method comprising: forminga semiconductor fin over a substrate, the semiconductor fin extendingfrom a top surface of the substrate; forming a dummy gate dielectriclayer on the semiconductor fin; forming a dummy gate electrode layer onthe dummy gate dielectric layer; forming a first hard mask layer overthe dummy gate dielectric layer; patterning the first hard mask layer,the patterned first hard mask layer having a top surface parallel to atop surface of the semiconductor fin; patterning the dummy gateelectrode layer forming a dummy gate electrode, the dummy gate electrodebeing coterminous with the patterned first hard mask layer, whereinafter the patterning the dummy gate electrode, the patterned first hardmask layer having a vertical sidewall of a first height, first heightbeing in a range from about 200 Å to about 400 Å; and removing thepatterned first hard mask layer to expose a top surface of the dummygate electrode, the exposed top surface of the dummy gate electrodehaving a top surface parallel to the top surface of the semiconductorfin.
 12. The method of claim 11, wherein after the removing the firsthard mask layer, the dummy gate electrode has a sidewall orthogonal tothe top surface of the dummy gate electrode.
 13. The method of claim 12,wherein an intersection of the sidewall and top surface of the dummygate electrode form a right angle.
 14. The method of claim 12, whereinthe first height being in a range from about 25% to about 50% of theheight of the dummy gate electrode.
 15. The method of claim 11 furthercomprising: forming gate spacers on opposite sides of the dummy gateelectrode; forming source/drain regions in the semiconductor fin, thedummy gate electrode being laterally between the source/drain regions;conformally depositing an etch stop layer over the gate spacers, thedummy gate electrode, and the semiconductor fin; forming an interlayerdielectric on the etch stop layer; planarizing the interlayer dielectricand the etch stop layer to expose the top surface of the dummy gateelectrode; and replacing the dummy gate electrode with an active gateelectrode.
 16. A method of forming a replacement-gate FinFET device, themethod comprising: forming a plurality of dummy gate electrodes over asemiconductor fin, the forming the plurality of dummy gate electrodescomprising: forming a dummy gate dielectric layer on the semiconductorfin; forming a dummy gate electrode layer on the dummy gate dielectriclayer, the dummy gate electrode layer having a first height; patterninga hard mask layer over the dummy gate electrode layer, the patternedhard mask layer having a sidewall of a second height, the second heightbeing from about 25% to about 50% of the first height, the sidewallbeing orthogonal to a top surface of the semiconductor fin; andpatterning the dummy gate electrode and dummy gate dielectric layer, thepatterned dummy gate electrode layer aligned with the patterned hardmask layer; forming gate spacers on opposites sides of the plurality ofdummy gate electrodes; forming source/drain regions in the semiconductorfin, the source/drain regions being between adjacent pairs of the dummygate electrodes; conformally depositing an etch stop layer over theplurality of dummy gate electrodes and respective gate spacers; formingan interlayer dielectric on the etch stop layer; removing the pluralityof dummy gate electrodes and the dummy gate dielectric layers; andforming a plurality of active gate electrodes in the openings formed bythe removal of the plurality of dummy gate electrodes.
 17. The method ofclaim 16, wherein the plurality of dummy gate electrodes have sidewallsorthogonal to the top surface of the semiconductor fin and top surfacesparallel to the top surface of the semiconductor fin.
 18. The method ofclaim 16, wherein the second height is in a range from about 200 Å toabout 400 Å.
 19. The method of claim 16, wherein the patterning thedummy gate electrode and dummy gate dielectric layer further comprisesperforming an etch process with an over-etch time from about 10% toabout 50%.
 20. The method of claim 16, wherein the patterning the dummygate electrode layer and dummy gate dielectric layer further comprisesperforming a plasma etch at a pressure in a range from about 2 mTorr toabout 5 mTorr, at a power in a range from about 300 watts to about 800watts, with an etching bias in range from about 50 volts to about 150volts, with a plasma flow including from about 20 sccm to about 200 sccmof HBr, and about 2 sccm to about 10 sccm of O₂.